Властивості матеріалів для резистивної пам’яті з довільним доступом

Залевський, Денис Віталійович

URI: http://elibrary.kdpu.edu.ua/xmlui/handle/123456789/7070
https://doi.org/10.31812/123456789/7070

Date: 2023

Abstract:

Дисертацію присвячено вивченню матеріалів для робочого шару комірок резистивної пам’яті з довільним доступом. Дослідження виконано методами функціоналу електронної густини та псевдопотенціалу із перших принципів. Використовувані зараз пристрої пам’яті мають певні недоліки, які можуть бути усунені у пристроях, виготовлених за технологією RRAM. Для зберігання та зчитування інформації з комірки RRAM використовується оборотна зміна опору комірки між двома стабільними станами. Окремо варто зазначити серед явних переваг те, що RRAM – пам'ять з довільним доступом, тобто такі пристрої забезпечують доступ до окремої комірки, а не до сторінок даних. Для широкомасштабної інтеграції пристроїв RRAM, тим не менш, необхідно вирішити ряд дослідницько-технологічних завдань. Існує кілька видів RRAM пам'яті, що різняться застосуванням різних матеріалів для виготовлення комірок. Основними вважаються OxRAM та CBRAM пам'яті. Довгий час ведуться розробки нових типів запам'ятовуючих пристроїв, і однією з них є пам'ять на основі матеріалів зі зміною фазового стану (PCM). Значним успіхом стала розробка interfacial phase-change memory (iPCM). Досліджено перемикальні параметри робочих шарів у пристроях резистивної пам'яті з довільним доступом, що виконані з таких матеріалів: епітаксіальної плівки твердого розчину SixGe1-x з дислокаціями, що заповнені сріблом; кластерів субоксидів HfOx з системою дивакансій оксигену, що заповнені атомами срібла; нескінченної наноплівки ZnO із системою вакансійних ниток у кисневій площині; кристалів твердих розчинів Sb2GexTe3- x (x=0,1,2). Виявлено, що структурна трансформація плівок кремнію або плівок твердого розчину в плівки з дислокаціями з наступним заповненням їх атомами срібла супроводжується значною зміною їх електронних властивостей від непровідних до провідних тобто реалізується фізичний механізм, що контролює перемикання між станами «встановити» й «скинути» резистивної пам'яті. При цьому наповнення плівок дислокаціями зменшує ширину енергетичної відстані між останнім заповненим та першим незайнятим рівнями цих нанооб'єктів майже на два порядки відносно бездефектних плівок і робить спектри розподілу їх електронних станів лінійчатими. Заповнення дислокацій атомами срібла приводить до зниження до нуля ширини енергетичної відстані між останнім заповненим та першим незайнятим рівнями. Визначено, що напруга перемикання між станами «встановити» й «скинути» у робочого шару резистивної пам'яті із механічно напруженої плівки твердого розчину Si0,9Ge0,1 з дислокаціями, заповненими атомами срібла або ні, становить 0,2 еВ, що в 2 рази більше ніж для плівок Si з дислокаціями. Доведено, що субоксиди HfOx є підходящими для використання у якості робочого шару резистивної пам'яті. Зафіксовано, що введення у кластер HfOx кристалічної організації кубічної сингонії кисневих вакансій у концентрації 4/64 з наступним заповненням їх атомами срібла супроводжується різкою зміною його електричних властивостей – майже на порядок знижується електричний опір (зменшується ширина енергетичної відстані між останнім заповненим та першим незайнятим рівнями) порівняно з вихідним матеріалом. Доведено, що механізм перемикання резистивної комутаційної пам'яті з робочим шаром оксиду цинку безпосередньо керується густиною кисневих вакансій. Утворення кисневих вакансій в концентрації 2/48 різко знижує електричний опір плівки ZnO (ширина енергетичної відстані між останнім заповненим та першим незайнятим рівнями зменшується на два порядки), при цьому вздовж напрямку укладання вакансій формується внутрішнє електричне поле, що характеризується потенціалом, розподіл якого набуває лінійного характеру із значною різницею вздовж напрямку вакансійної нитки, тобто утворюється внутрішня напруга зміщення, цей провідний ефект підсилюється зі збільшенням густини кисневих вакансій до концентрації 4/48. Встановлено на атомарному рівні фізичний механізм, що контролює перемикання між станами «встановити» й «скинути» резистивної пам'яті зі змінним фазовим станом, робочий шар якої складається на основі твердих розчинів Sb2GexTe3-x (x=0,1,2), та встановлені кількісні характеристики такого перемикання. Так, додавання до матеріалу Sb2Te3 атомів Ge у концентрації 36/108 знижує ширину енергетичної відстані між останнім заповненим та першим незайнятим рівнями такого твердого розчину на два порядки порівняно з вихідною речовиною, подальше збільшення концентрації атомів Ge до концентрації 72/108 нівелює набутий провідний ефект – ширина енергетичної відстані між останнім заповненим та першим незайнятим рівнями такого твердого розчину збільшується та майже не відрізняється порівняно з вихідною речовиною. Встановлено, що інженерія контрольованими дефектами забороненої зони матеріалів робочого шару резистивної пам’яті є основним фізичним змістом в механізмі перемикання. Виявлено нові форми й типи реалізації контрольованих дефектів (дивакансії, нанодроти, вакансійні нитки) у конкретних матеріалах робочих шарів пристроїв RRAM. Поглиблено розуміння інженерії дефектами забороненої зони матеріалів робочого шару резистивної пам'яті.

Description:

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