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Browsing Кафедра інформатики та прикладної математики by Subject "silicon surface"

Browsing Кафедра інформатики та прикладної математики by Subject "silicon surface"

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  • High-temperature configurations of dimers in Si (001) surface layers 
    Ків, Арнольд Юхимович; Maksymova, Tatiana I.; Моісеєнко, Наталя Володимирівна; Соловйов, Володимир Миколайович (2003)
    Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical ...
  • MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers 
    Ків, Арнольд Юхимович; Maximova, T. I.; Соловйов, Володимир Миколайович (2000-06)
    Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the ...
  • Microstructure of the relaxed (001) Si surface 
    Ків, Арнольд Юхимович; Соловйов, Володимир Миколайович; Maximova, Tatiana I. (2000)
    MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) ...

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