Abstract:
Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the relaxation time. Energy dependencies of radiation induced processes show a possibility to improve the real staicture of Silicon surface and to accelerate the long-term surface relaxation in microelectronic technology.
Description:
1. P.W. Jacobs, A.E. Kiv, R.M. Balabay et al. Computer Modeling & New Technologies (1998) Volume 2, pp.15-20.
