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MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers

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dc.contributor.author Ків, Арнольд Юхимович
dc.contributor.author Maximova, T. I.
dc.contributor.author Соловйов, Володимир Миколайович
dc.date.accessioned 2017-08-26T12:09:22Z
dc.date.available 2017-08-26T12:09:22Z
dc.date.issued 2000-06
dc.identifier.citation Soloviov V. N. MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers / A. E. Kiv, T. I. Maximova, V. N. Soloviov // NATO Advanced Study Institute “Functional Gradient Materials And Surface Layers, Prepared by Fine Particles Technology” : Program. Abstracts. Participants. – June 18-28, Kiev, Ukraine. – L16. – Kiev, 2000. – P. 23. uk
dc.identifier.uri http://elibrary.kdpu.edu.ua/handle/0564/1278
dc.identifier.uri https://doi.org/10.31812/0564/1278
dc.description 1. P.W. Jacobs, A.E. Kiv, R.M. Balabay et al. Computer Modeling & New Technologies (1998) Volume 2, pp.15-20.
dc.description.abstract Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the relaxation time. Energy dependencies of radiation induced processes show a possibility to improve the real staicture of Silicon surface and to accelerate the long-term surface relaxation in microelectronic technology. uk
dc.language.iso en uk
dc.subject molecular dynamics uk
dc.subject microelectronics uk
dc.subject radiation treatment uk
dc.subject silicon surface uk
dc.title MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers uk
dc.type Article uk


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