dc.contributor.author |
Ків, Арнольд Юхимович |
|
dc.contributor.author |
Maximova, T. I. |
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dc.contributor.author |
Соловйов, Володимир Миколайович |
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dc.date.accessioned |
2017-08-26T12:09:22Z |
|
dc.date.available |
2017-08-26T12:09:22Z |
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dc.date.issued |
2000-06 |
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dc.identifier.citation |
Soloviov V. N. MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers / A. E. Kiv, T. I. Maximova, V. N. Soloviov // NATO Advanced Study Institute “Functional Gradient Materials And Surface Layers, Prepared by Fine Particles Technology” : Program. Abstracts. Participants. – June 18-28, Kiev, Ukraine. – L16. – Kiev, 2000. – P. 23. |
uk |
dc.identifier.uri |
http://elibrary.kdpu.edu.ua/handle/0564/1278 |
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dc.identifier.uri |
https://doi.org/10.31812/0564/1278 |
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dc.description |
1. P.W. Jacobs, A.E. Kiv, R.M. Balabay et al. Computer Modeling & New Technologies (1998) Volume 2, pp.15-20. |
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dc.description.abstract |
Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the relaxation time. Energy dependencies of radiation induced processes show a possibility to improve the real staicture of Silicon surface and to accelerate the long-term surface relaxation in microelectronic technology. |
uk |
dc.language.iso |
en |
uk |
dc.subject |
molecular dynamics |
uk |
dc.subject |
microelectronics |
uk |
dc.subject |
radiation treatment |
uk |
dc.subject |
silicon surface |
uk |
dc.title |
MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers |
uk |
dc.type |
Article |
uk |