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dc.contributor.author	Ків, Арнольд Юхимович
dc.contributor.author	Maximova, T. I.
dc.contributor.author	Соловйов, Володимир Миколайович
dc.date.accessioned	2017-08-26T12:09:22Z
dc.date.available	2017-08-26T12:09:22Z
dc.date.issued	2000-06
dc.identifier.citation	Soloviov V. N. MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers / A. E. Kiv, T. I. Maximova, V. N. Soloviov // NATO Advanced Study Institute “Functional Gradient Materials And Surface Layers, Prepared by Fine Particles Technology” : Program. Abstracts. Participants. – June 18-28, Kiev, Ukraine. – L16. – Kiev, 2000. – P. 23.	uk
dc.identifier.uri	http://elibrary.kdpu.edu.ua/handle/0564/1278
dc.identifier.uri	https://doi.org/10.31812/0564/1278
dc.description	1. P.W. Jacobs, A.E. Kiv, R.M. Balabay et al. Computer Modeling & New Technologies (1998) Volume 2, pp.15-20.
dc.description.abstract	Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the relaxation time. Energy dependencies of radiation induced processes show a possibility to improve the real staicture of Silicon surface and to accelerate the long-term surface relaxation in microelectronic technology.	uk
dc.language.iso	en	uk
dc.subject	molecular dynamics	uk
dc.subject	microelectronics	uk
dc.subject	radiation treatment	uk
dc.subject	silicon surface	uk
dc.title	MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers	uk
dc.type	Article	uk