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Atomic Particle Delocalisation Effect in Disordered Media

Соловйов, Володимир Миколайович

URI: http://elibrary.kdpu.edu.ua/handle/0564/1013
https://doi.org/10.1002/pssa.2210830216

Date: 1984-06-16

Abstract:

Possible reasons are given of the higher diffusion rates of atoms (comparatively to crystals) in disordered condensed media (in metallic and oxide glasses, polycrystalline and amorphous semiconductors). It is shown, that the diffusion coefficient exponentially depends on the disordering degree of the media. A quantum-chemical simulation of the diffusion processes in amorphous silicon is made, The results of which corresponds to the delocalisation atom effect obtained in random fields. The most characteristic experimental features of the activation processes in disordered media are analysed.

Description:

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