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| dc.contributor.author | Ків, Арнольд Юхимович | |
| dc.contributor.author | Maximova, T. I. | |
| dc.contributor.author | Соловйов, Володимир Миколайович | |
| dc.date.accessioned | 2017-08-16T20:10:57Z | |
| dc.date.available | 2017-08-16T20:10:57Z | |
| dc.date.issued | 1999-10 | |
| dc.identifier.citation | Kiv A. E. Microstructure of the relaxed (001) Si surface / A. E. Kiv, T. I. Maximova, V. N. Soloviev // AM’99: Internationa Conference “Advanced Materials”. 3-7 October 1999, Kiev, Ukraine : Abstracts of Symposium B: Functional Materials for Information Recording and Radiation Monitoring. – 1999. – P. 11. | uk |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1244 | |
| dc.identifier.uri | https://doi.org/10.31812/0564/1244 | |
| dc.description | 1. F.H. Stillinger, T.A. Weber, Phys. Rev., B31, 9262 (1985) 2. P.W. Jacobs, A.E. Kiv, R.M. Balabay et al., RAU Sci. Rep., Computer modeling & New Technologies, 2, 15, (1998) | |
| dc.description.abstract | We have applied molecular dynamics method and semi-empirical potential [1] to obtain the realistic picture of Si surface layers relaxation. The starting configuration was taken as a parallelepiped containing 864 atoms. There were 12 layers with 72 atoms in each one. Periodic boundary conditions were used in two dimensions. | uk |
| dc.language.iso | en | uk |
| dc.subject | molecular dynamics | uk |
| dc.subject | semi-empirical potential | uk |
| dc.subject | angle distribution function | uk |
| dc.subject | quasi-disordered phase | uk |
| dc.title | Microstructure of the relaxed (001) Si surface | uk |
| dc.type | Article | uk |
