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Thermally Induced Metastable Processes in Amorphous Hydrogenerated Silicon. Fluction Model of a-Si:H

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dc.contributor.author Aldabergenova, S. B.
dc.contributor.author Feokstistov, N. A.
dc.contributor.author Karpov, V. G.
dc.contributor.author Koughia, K. V.
dc.contributor.author Pevtsov, A. B.
dc.contributor.author Соловйов, Володимир Миколайович
dc.date.accessioned 2017-08-01T21:39:31Z
dc.date.available 2017-08-01T21:39:31Z
dc.date.issued 1990
dc.identifier.citation Aldabergenova S. B. Thermally Induced Metastable Processes in Amorphous Hydrogenerated Silicon. Fluction Model of a-Si:H / S. B. Aldabergenova, N. A. Feokstistov, V. G. Karpov, K. V. Koughia, A. B. Pevtsov, V. N. Solovijev // Transport, Correlation and Structural Defects / Edited by Hellmut Fritzsche. – Singapore, New Jersey, London, Hong Kong : World Scientific, 1990. – Pp. 129-158. – (Advances in Disordered Semiconductors, Vol. 3). uk
dc.identifier.isbn 9971-50-973-3
dc.identifier.uri http://elibrary.kdpu.edu.ua/handle/0564/1210
dc.identifier.uri https://doi.org/10.1142/9789814368377_0004
dc.description 8. A.A. Andreev, T.A. Sidorova, E.A. Kazakova, M.S. Ablova, A. Ya. Vinogradov, Fiz. Tech. Poluprov. 20. 1469 (1986); Sov. Phys. Semicond. 20. 1469 (1986). 9. ZE. Smith and S. Wagner, Phys. Rev. Lett. 52. 688 (1987). 10. K. Shepard, ZE. Smith, S. Aljishi and S. Wagner, Appl. Phys. Lett 25. 1644 (1988). 11. T.J. McMahon and R. Tsu, Appl. Phys. Lett. 5L 412 (1987). 12. V.G. Karpov. V.N. Solovijev, Fiz. Tverdogo Tela, 2L 5 (1989); Sov. Phys. Solid. State, 2L 5 (1989). 13. T. Tiedje, 1984, in "The Physics of Hydrogenated Amorphous Silicon II", edited by J.D. Joannopoulos and G. Lucovsky (Springer-Verlag, Berlin, 1984) P 14. R.A. Street, C.C. Tsai, J. Kakalios and W.B. Jackson, Philos. Mag. B 56. 305, (1987). 15. M. Vanecec, J. Kocka, J. Stuchlik, Z. Kozisek, O. Stika, A. Triska, Sol. Energy Mater. 8, 411 (1983). 16. P.W. Anderson, B.I. Halperin and C.M. Verma, Philos. Mag. 25. 1 (1975). 17. "Amorphous Solids: Low Temperature Properties", ed. by W.A. Phillips (Springer-Verlag, Berlin, 1981). 18. M. Stutzmann, W.B. Jackson and C.C. Tsai, Phys. Rev. B 22, 23 (1985). 19. D. Redfield, J. Non-Cryst. Solids 97/98. 783 (1987). 20. L. Ley, 1984, in "The Physics of Hydrogenated Amorphous Silicon II", edited byJ.D. Joannopoulos and G. Lucovsky (Springer-Verlag, Berlin, 1984) p 21. M.A. Krivoglaz, Uspehi Fiz. Nauk, 111. 617 (1973) (in Russian). 22. R.A. Street, Adv. in Phys. 20. 593 (1981). 23. V.N. Solovijev, Phys. Stat. Solidi (a) 82. 553 (1984). 24. D.L. Staebler and C.R. Wronski, J. Appl. Phys. 5L 3262 (1980).
dc.description.abstract In this paper we discuss some new experimental results regarding the changes in the electronic properties of undoped a-Si:H under different conditions of thermal annealing and cooling which govern hydrogen diffusion. The following interpreta­tion consists of two parts: the first is a phenomenological model and the second is its microscopic concretization. The proposed phenomenological model is free from assumptions about the detailed mechanism of the interaction between electrons and the hydrogen subsystem. uk
dc.language.iso en uk
dc.publisher World Scientific uk
dc.relation.ispartofseries Advances in Disordered Semiconductors;3
dc.subject hydrogen diffusion uk
dc.subject hydrogenated amorphous silicon uk
dc.subject fiuctuonic states uk
dc.title Thermally Induced Metastable Processes in Amorphous Hydrogenerated Silicon. Fluction Model of a-Si:H uk
dc.type Book chapter uk


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