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| dc.contributor.author | Ків, Арнольд Юхимович | |
| dc.contributor.author | Соловйов, Володимир Миколайович | |
| dc.contributor.author | Maximova, T. I. | |
| dc.date.accessioned | 2017-07-27T12:13:50Z | |
| dc.date.available | 2017-07-27T12:13:50Z | |
| dc.date.issued | 2000 | |
| dc.identifier.citation | Kiv A. E. Effect of Al atom forcing out by Si in Al-Si solid solutions / A. E. Kiv, V. N. Soloviev, T. I. Maximova // Computer Modeling & New Technologies. – 2000. –V. 4. – N 2. – P. 44-46. | uk |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1141 | |
| dc.identifier.uri | https://doi.org/10.31812/0564/1141 | |
| dc.description | [1] Farrell K., Stiegler J.O., Gehlbash R.E. (1970) Transmutation-Produces Silicon Precipitates in Irradiated Aluminum. Metallography 3, 275-384 [2] Ozawa E., Kimura H. (1970) Excess vacancies and the Nucleation of precipitates in Aluminum-Silicon Alloys. Acta Metallurgica 18, 995-1004 [3] Kiv A. E., Soloviev V. N., Maximova T. I. (2000) Microstructure of the Relaxed (001) Si structure. Semicond. Phys. & Optoelectonics 3, 157-161 [4] Abell G. C. (1985) Empirical chemical pseudopotential theory of molecular and metallic bonding. Phys. Rev. B31, 6184-6196 [5]. Iskanderova Z. A., Kiv A. E., Soloviev V. N. (1977) About the Mechanism of E-centre formation in Si. Phys. and Techniques of Semicond. 11, 199-201 [6] Britavskaya E. P., Kiv A. E., Kovalchuk V. V., Urum G.D. (1995) Surface Disordered Phase in Semiconductors. Ukr. Phys. Journ. 7, 698-701. | |
| dc.description.abstract | It is shown by computer simulation of the Al-Si solid solution that at the first stages of Si precipitates formation the small Si clusters arise in the tetrahedral configurations. This process is accompanied by the effect of Al atom forcing out from the lattice site by one of the Si atoms of nuclei. | uk |
| dc.language.iso | en | uk |
| dc.subject | computer simulation | uk |
| dc.subject | Si clusters | uk |
| dc.subject | Al atom forcing | uk |
| dc.subject | molecular dynamics | uk |
| dc.title | Effect of Al atom forcing out by Si in Al-Si solid solutions | uk |
| dc.type | Article | uk |
