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| dc.contributor.author | Ків, Арнольд Юхимович | |
| dc.contributor.author | Fuks, D. | |
| dc.contributor.author | Моісеєнко, Наталя Володимирівна | |
| dc.contributor.author | Соловйов, Володимир Миколайович | |
| dc.date.accessioned | 2017-07-09T18:29:35Z | |
| dc.date.available | 2017-07-09T18:29:35Z | |
| dc.date.issued | 2002 | |
| dc.identifier.citation | Kiv A. E. Silicon-aluminum bonding in Al alloys / A. E. Kiv, D. Fuks, N. V. Moiseenko, V. N. Solovyov // Computer Modelling & New Technologies. – 2002. – Volume 6, no. 1. – Pp. 47-50. | uk |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1033 | |
| dc.identifier.uri | https://doi.org/10.31812/0564/1033 | |
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| dc.description.abstract | Ab initio calculation was performed to investigate the nature of Si-Al bonding in Al based alloys. Total electronic energy Etot for different configurations of the model cluster Si2Al6 was calculated. When the model cluster consists of two perfect tetrahedrons there is a strong influence of the Si-Si distance on the Si-Al adiabatic potential. The equilibrium distance between Si and Al atoms increases with the length of Si-Si bond increasing. It was concluded that description of Si clusters in Al matrix demands an account of the angle depending part of Si-Al interaction. | uk |
| dc.language.iso | en | uk |
| dc.publisher | Transport and Telecommunication Institute | uk |
| dc.subject | Si-Al alloys | uk |
| dc.subject | ab-initio band calculations | uk |
| dc.title | Silicon-aluminum bonding in Al alloys | uk |
| dc.type | Article | uk |
