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| dc.contributor.author | Lisovskyy, I. P. | |
| dc.contributor.author | Litovchenko, V. G. | |
| dc.contributor.author | Gnenyy, B. M. | |
| dc.contributor.author | Fussel, W. | |
| dc.contributor.author | Ків, Арнольд Юхимович | |
| dc.contributor.author | Соловйов, Володимир Миколайович | |
| dc.contributor.author | Maximova, Tatiana I. | |
| dc.date.accessioned | 2017-07-09T18:22:20Z | |
| dc.date.available | 2017-07-09T18:22:20Z | |
| dc.date.issued | 2002 | |
| dc.identifier.citation | Lisovskyy I. P. Effect of oxygen agglomeration in polycrystaline Si (SIPOS) films / I. P. Lisovskyy, V. G. Litovchenko, B. M. Gnenyy, W. Fussel, A. E. Kiv, V. N. Soloviev, T. I. Maximova // Journal of Materials Science: Materials in Electronics. – 2002. – Vol. 13, N 3. – Pp. 167-171. | uk |
| dc.identifier.issn | 0957-4522 | |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1032 | |
| dc.identifier.uri | https://doi.org/10.1023/A:1014385401282 | |
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| dc.description.abstract | IR transmission spectra of SIPOS structures were measured and were investigated by using an approach of deconvolution of the Si-O stretching band into Gauss profiles. It was found that the space distribution of oxygen in SIPOS layers treated at elevated temperatures does not correspond to the prediction of RBM statistics. The oxygen agglomeration was observed. Optical microscopy was also applied to get additional information about the SIPOS films after treatment in HF solution. The peculiarities of the space distribution of oxygen in SIPOS films are explained on the basis of a computer simulation of free Si surface relaxation. A computer model has shown that a disordered phase arises in the Si surface layers at elevated temperatures. This phase is characterized by a large concentration of stressed and dangling bonds. There are lattice nodes with more than one dangling bond that are suitable sites for oxygen agglomeration. | uk |
| dc.language.iso | en | uk |
| dc.publisher | Springer Science+Business Media | uk |
| dc.subject | IR transmission spectra | uk |
| dc.subject | SIPOS structures | uk |
| dc.subject | space distribution | uk |
| dc.subject | RBM statistics | uk |
| dc.subject | oxygen agglomeration | uk |
| dc.subject | SIPOS films | uk |
| dc.subject | HF solution | uk |
| dc.subject | peculiarities of the space distribution of oxygen | uk |
| dc.subject | computer simulation | uk |
| dc.subject | free Si surface relaxation | uk |
| dc.subject | disordered phase | uk |
| dc.subject | Si surface layers | uk |
| dc.subject | stressed bonds | uk |
| dc.subject | dangling bonds | uk |
| dc.subject | quasi-disordered phase | uk |
| dc.title | Effect of oxygen agglomeration in polycrystaline Si (SIPOS) films | uk |
| dc.type | Article | uk |
