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| dc.contributor.author | Ків, Арнольд Юхимович | |
| dc.contributor.author | Maximova, Tatiana I. | |
| dc.contributor.author | Соловйов, Володимир Миколайович | |
| dc.date.accessioned | 2017-07-09T12:28:44Z | |
| dc.date.available | 2017-07-09T12:28:44Z | |
| dc.date.issued | 2001 | |
| dc.identifier.citation | Kiv A. E. MD simulation of the ion-stimulated processes in Si surface layers / A. E. Kiv, T. I. Maximova, V. N. Soloviev // Functional Gradient Materials And Surfase Layers Prepared by Fine Particles Technology : Proceedings of the NATO Advanced Study Institute on Functional Gradient Materials and Surface Layers Prepared by Fine Particles Technology. Kiev, Ukraine, June 18-28, 2000 / Edited by Marie-Isabelle Baraton and Irina Uvarova. – Kluwer Academic Publishers, 2001. – P. 297-303. – (NATO Science Series. Series II: Mathematics, Physics and Chemistry – Vol. 16). | uk |
| dc.identifier.isbn | 978-0-7923-6925-7 | |
| dc.identifier.isbn | 978-94-010-0702-3 | |
| dc.identifier.other | DOI 10.1007/978-94-010-0702-3 | |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1031 | |
| dc.identifier.uri | https://doi.org/10.1007/978-94-010-0702-3_30 | |
| dc.description.abstract | In this paper we described calculations of relaxation processes of Si surface layers at elevated temperatures and caused by ion beam bombardment. New details in microstructure of relaxed Si surface layers are obtained. The energy dependencies of ion-stimulated atomic processes show that the most expressed effect of improvement of Si surface layers takes place in vicinity of the energy threshold for elastic atom displacement in Si lattice. | uk |
| dc.language.iso | en | uk |
| dc.publisher | Kluwer Academic Publishers | uk |
| dc.subject | Si (001) surface | uk |
| dc.subject | Ab initio calculations | uk |
| dc.subject | relaxation processes | uk |
| dc.subject | disordered atomic configurations | uk |
| dc.subject | Molecular Dynamics method | uk |
| dc.subject | radiation treatment | uk |
| dc.subject | low-energy ion bombardment | uk |
| dc.subject | self-ion implantation | uk |
| dc.subject | ion irradiation | uk |
| dc.subject | surface characteristics | uk |
| dc.subject | ion beam bombardment | uk |
| dc.subject | ion-stimulated atomic processes | uk |
| dc.title | MD simulation of the ion-stimulated processes in Si surface layers | uk |
| dc.type | Article | uk |
