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http://elibrary.kdpu.edu.ua/xmlui/handle/0564/1023Повний запис метаданих
| Поле DC | Значення | Мова |
|---|---|---|
| dc.contributor.author | Jacobs, Patrick W. M. | - |
| dc.contributor.author | Ків, Арнольд Юхимович | - |
| dc.contributor.author | Соловйов, Володимир Миколайович | - |
| dc.contributor.author | Maximova, Tatyana N. | - |
| dc.date.accessioned | 2017-07-08T18:36:24Z | - |
| dc.date.available | 2017-07-08T18:36:24Z | - |
| dc.date.issued | 1999 | - |
| dc.identifier.citation | Jacobs P. W. Radiation-stimulated processes in Si surface layers / P. W. Jacobs, A. E. Kiv, V. N. Soloviev, T. N. Maximova // Computer Modelling and New Technologies. – 1999. – Vol. 3. – Pp. 15-18. | uk |
| dc.identifier.issn | 1407-5806 | - |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1023 | - |
| dc.identifier.uri | https://doi.org/10.31812/0564/1023 | - |
| dc.description | [1] Chadi D.J. (1979) Dimer configurations at Si surface. Phys. Rev. Lett. 43, 43 [2] Zhu Z., Shima N., Tsukada V. (1989) New types of dimers in Si. Phys. Rev. B 40,11868 [3] Dabrovski J., Scheffler V. (1992) Transitions between dimer configurations in Si. Appl. Surf. Sci. 56 -58, 15 [4] Alien M.P., Tildesley D.J. (1987) Computer simulations in liquids. Oxford University Press, Oxford [5] Keating P.N. (1966) Interatomic potential in Si. Phys. Rev. 145, 637 [6] Stillinger F.H., Weber T.A. (1985) New interatomic potential for Si. Phys. Rev. B 31, 52-62 [7] Blochi P.E., Smargiassi E., Car R., Laks D.B., S.T. (1993) Pantelides ab initio calculations of Si electronic structure. Phys. Rev. Lett. 70, 2435 [8] Jacobs P.W., Kiv A.E., Balabay R.M. et al. (1998) RAU Sci. Rep. Computer modelling & New Technologies 2, 15-20 [9] Kiv A.E., Kovalchuk V.V., Yanchuk V.A. (1989) H adsorption by disordered Si clusters. Phys. Stat. Sol.(b) 156, K101-K104 [10] Britavskaya E.P., Chislov V.V., Kiv A.E. et al. (1995) Surface disordered phase in semiconductors. Ukr. Phys. J. 40, 698-701 | - |
| dc.description.abstract | Molecular dynamics computer simulations have been performed to study the character o disordering of atom configurations in Si surface layers. The relaxation of free Si surface was investigated. The main structural parameters were calculated, such as a distribution of angle between chemical bonds, the density of dangling bonds, structural peculiarities of Si surface layers and radiation effects. It was concluded that Si surface at real conditions is a disordered phase similar to a-Si [1]. | uk |
| dc.language.iso | en | uk |
| dc.publisher | Transport and Telecommunication Institute | uk |
| dc.subject | Si surface | uk |
| dc.subject | molecular dynamics | uk |
| dc.subject | relaxation processes | uk |
| dc.subject | radiation effects | uk |
| dc.title | Radiation-stimulated processes in Si surface layers | uk |
| dc.type | Article | uk |
| Розташовується у зібраннях: | Кафедра інформатики та прикладної математики | |
Файли цього матеріалу:
| Файл | Опис | Розмір | Формат | |
|---|---|---|---|---|
| 2_radiation-stimulated_processes.pdf | Article | 60.74 kB | Adobe PDF | Переглянути/Відкрити |
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