Будь ласка, використовуйте цей ідентифікатор, щоб цитувати або посилатися на цей матеріал:
http://elibrary.kdpu.edu.ua/xmlui/handle/0564/1021Повний запис метаданих
| Поле DC | Значення | Мова |
|---|---|---|
| dc.contributor.author | Jacobs, Patrick W. M. | - |
| dc.contributor.author | Ків, Арнольд Юхимович | - |
| dc.contributor.author | Соловйов, Володимир Миколайович | - |
| dc.contributor.author | Maximova, Tatyana N. | - |
| dc.contributor.author | Chislov, Valery V. | - |
| dc.date.accessioned | 2017-07-08T18:18:37Z | - |
| dc.date.available | 2017-07-08T18:18:37Z | - |
| dc.date.issued | 1999 | - |
| dc.identifier.citation | Jacobs P. W. M. Radiation-stimulated processes in Si surface layers / Patrick W. M. Jacobs, Arnold E. Kiv, Vladimir N. Soloviev, Tatyana N. Maximova, Valery V. Chislov // SPIE Proceedings [SPIE International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering - St. Petersburg, Russia (Monday 8 June 1998)] International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering NDTCS-98. – 1999. – Vol. 3687. – Pp. 170-174. | uk |
| dc.identifier.issn | 0277-786X | - |
| dc.identifier.uri | http://elibrary.kdpu.edu.ua/handle/0564/1021 | - |
| dc.identifier.uri | https://doi.org/10.1117/12.347417 | - |
| dc.description | [1] Chadi D.J. (1979) Dimer configurations at Si surface. Phys. Rev. Lett. 43, 43 [2] Zhu Z., Shima N., Tsukada V. (1989) New types of dimers in Si. Phys. Rev. B 40,11868 [3] Dabrovski J., Scheffler V. (1992) Transitions between dimer configurations in Si. Appl. Surf. Sci. 56 -58, 15 [4] Alien M.P., Tildesley D.J. (1987) Computer simulations in liquids. Oxford University Press, Oxford [5] Keating P.N. (1966) Interatomic potential in Si. Phys. Rev. 145, 637 [6] Stillinger F.H., Weber T.A. (1985) New interatomic potential for Si. Phys. Rev. B 31, 52-62 [7] Blochi P.E., Smargiassi E., Car R., Laks D.B., S.T. (1993) Pantelides ab initio calculations of Si electronic structure. Phys. Rev. Lett. 70, 2435 [8] Jacobs P.W., Kiv A.E., Balabay R.M. et al. (1998) RAU Sci. Rep. Computer modelling & New Technologies 2, 15-20 [9] Kiv A.E., Kovalchuk V.V., Yanchuk V.A. (1989) H adsorption by disordered Si clusters. Phys. Stat. Sol.(b) 156, K101-K104 [10] Britavskaya E.P., Chislov V.V., Kiv A.E. et al. (1995) Surface disordered phase in semiconductors. Ukr. Phys. J. 40, 698-701 | - |
| dc.description.abstract | Molecular dynamics computer simulations have been perfonned to study the character of disordering of atom configurations in Si surface layers. The relaxation of free Si surface was investigated. The main structural parameters were calculated, such as a distribution of angles between chemical bonds, the density of dangling bonds, structural peculiarities of Si surface layers and radiation effects. It was concluded that Si surface at real conditions is a disordered phase similar to a-Si [1]. | uk |
| dc.language.iso | en_US | uk |
| dc.publisher | SPIE | uk |
| dc.subject | Si surface | uk |
| dc.subject | molecular dynamics | uk |
| dc.subject | relaxation processes | uk |
| dc.subject | radiation effects | uk |
| dc.title | Radiation-stimulated processes in Si surface layers | uk |
| dc.type | Article | uk |
| Розташовується у зібраннях: | Кафедра інформатики та прикладної математики | |
Файли цього матеріалу:
| Файл | Опис | Розмір | Формат | |
|---|---|---|---|---|
| Jacobs_Kiv_Soloviev_Maximova_Chislov.pdf | Article | 273.34 kB | Adobe PDF | Переглянути/Відкрити |
Усі матеріали в архіві електронних ресурсів захищені авторським правом, всі права збережені.