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dc.contributor.author	Lisovskyy, I. P.	-
dc.contributor.author	Litovchenko, V. G.	-
dc.contributor.author	Gnenyy, B. M.	-
dc.contributor.author	Fussel, W.	-
dc.contributor.author	Ків, Арнольд Юхимович	-
dc.contributor.author	Соловйов, Володимир Миколайович	-
dc.contributor.author	Maximova, Tatiana I.	-
dc.date.accessioned	2017-07-09T18:22:20Z	-
dc.date.available	2017-07-09T18:22:20Z	-
dc.date.issued	2002	-
dc.identifier.citation	Lisovskyy I. P. Effect of oxygen agglomeration in polycrystaline Si (SIPOS) films / I. P. Lisovskyy, V. G. Litovchenko, B. M. Gnenyy, W. Fussel, A. E. Kiv, V. N. Soloviev, T. I. Maximova // Journal of Materials Science: Materials in Electronics. – 2002. – Vol. 13, N 3. – Pp. 167-171.	uk
dc.identifier.issn	0957-4522	-
dc.identifier.uri	http://elibrary.kdpu.edu.ua/handle/0564/1032	-
dc.identifier.uri	https://doi.org/10.1023/A:1014385401282	-
dc.description	1. P. A K H T E R , M. N. Z A K I R , A. B A I G , Semieond. Sci. Technology 6(1991) 135. 2. C. V A L K E R , ; . D. W H I T F I E L D a n d P. L. FE JE S , Mater. Res. Soc. Symp. ProtL 14 (1983) 187. 3. K. NAUKA, H. C, GATOS and J. LAGOVSKY, Appl. Phys. Lett. 43 (1983) 241. 4. PARK, M. DUECHER and H. J. M OELLER, in “ Proceedings of the Twelfth European Photovoltaic Solar Energy Conference, Amsterdam, June 1994", edited by J. Park (Elsevier Science, Kidlington, 1994) p. 996. 5. I. E. R EIS, CHUNG and H. M O E LER , in “ Proceedings of the Eleventh European Photovoltaic Solar Energy Conference Montreux September 1992" edited by J. Park (Elsevier Science, Kidlington, 1992) p. 499. 6. I. P. L I S O V S K I I , V. G. L I T O V C H E N K O , V. B. L O Z I N S K I I a n d G. I. STEBLOVSKII, Thin Solid Films 213 (1992) 164. 7. I. P. L I S O V S K I I , V. G. L IT O V C H E N K O , V. B. L O Z I N S K I I , V. P. M E L N IK a n d S. I. FROLOV , ibid. 247 (1994) 264. 8. I. P. L I S O V S K I I , V. G. L IT O V C H E N K O , V. B. L O Z I N S K I I , S. J. FROLOV, H. F L IE T N E R , W. F U S S EL and E. SCHM ID T, J. Non-Cryst. Solids 87 (1995) 91. 9. A. E. K IV , V. N . S O L O V I E V a n d T. I. M A X I M O V A , Semieond. Phys., Quantum Electron. Opipelectron. 3 (2000) 157. 10. H. H I B I N O , K. S U M I T O M O a n d T. F U K U D A , Phys. Rev. B58 (1999) 12587. 11. A. L E H M A N N , L. SCH U M A N N and K. H U B N ER , Phys. Status Solid B i l l (1984) 505. 12. P. G A W O R Z E W S K I, E. H IL D , F.-G . K I R S C H T and L. V ECSERN YES, Phys. Status Solid A 85 (1984) 133. 13. M. N A K A M U R A , Y. M O C H I Z U K I , K. U S A M I , Y. I T O H a n d T. N OZAK I, Solid State Commun. 50 (1984) 1079. 14. I. P. L IS O V S K Y Y , V. G„ L I T O V C H E N K O , B. M. G N E N Y Y . D. O. M AZ UR O V , W. F U S S E L , A. E. KIV, T. I. M A X IM O V A a n d V. N. S O L O V IE V , Phys. Low-Dim. Struct. 7/8 (2001) 113. 15. A. P. D O S T A N K O , E. S, A K U L I C H , V. YA. S H IR IP O V an d S. A. SOBOLEV, /. Appl. Spectrose 50 (1989) 436. 16. I. V. S V A D K O V S K I I , E. S. A K U L I C H , V. YA. S H I R I P O V a n d A. P. d o s t a n k o , ibid. 55(1991) 322. 17. G. V. S I D O R E N K O , N„ N. S Y R B U , A. T, G A P O N E N K O an d V. D. P R IL E P O V , Elektronnaya Tekhnika, Seria Materialy 256 (1991)49. 18. W. F U S S E L , W. H EN R IO N a n d R . SC H O L Z , Microelectr. Eng. 22 (1993) 355. 19. P. W. J A C O B S , A, E. K IV , R. M. B A L A B A Y , N . V. G R I S C H E N K O , V. V. C H IS L O V , J . I. D O N C H E V a n d S. V. PRIKHODNAYA, Comput. Model. New Technol. 2 (1998) 15. 20. F. H. S T I L L I N G E R and T. A. W E B E R , Phys. Rev. B 31 (1985) 52. 21. F. F. A B R A H A M and I. P. B A T R A , Surf. Sci. 163 (1985) L752.	-
dc.description.abstract	IR transmission spectra of SIPOS structures were measured and were investigated by using an approach of deconvolution of the Si-O stretching band into Gauss profiles. It was found that the space distribution of oxygen in SIPOS layers treated at elevated temperatures does not correspond to the prediction of RBM statistics. The oxygen agglomeration was observed. Optical microscopy was also applied to get additional information about the SIPOS films after treatment in HF solution. The peculiarities of the space distribution of oxygen in SIPOS films are explained on the basis of a computer simulation of free Si surface relaxation. A computer model has shown that a disordered phase arises in the Si surface layers at elevated temperatures. This phase is characterized by a large concentration of stressed and dangling bonds. There are lattice nodes with more than one dangling bond that are suitable sites for oxygen agglomeration.	uk
dc.language.iso	en	uk
dc.publisher	Springer Science+Business Media	uk
dc.subject	IR transmission spectra	uk
dc.subject	SIPOS structures	uk
dc.subject	space distribution	uk
dc.subject	RBM statistics	uk
dc.subject	oxygen agglomeration	uk
dc.subject	SIPOS films	uk
dc.subject	HF solution	uk
dc.subject	peculiarities of the space distribution of oxygen	uk
dc.subject	computer simulation	uk
dc.subject	free Si surface relaxation	uk
dc.subject	disordered phase	uk
dc.subject	Si surface layers	uk
dc.subject	stressed bonds	uk
dc.subject	dangling bonds	uk
dc.subject	quasi-disordered phase	uk
dc.title	Effect of oxygen agglomeration in polycrystaline Si (SIPOS) films	uk
dc.type	Article	uk
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