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Browsing Кафедра інформатики та прикладної математики by Author "Maximova, T. I."

Browsing Кафедра інформатики та прикладної математики by Author "Maximova, T. I."

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  • Ків, Арнольд Юхимович; Соловйов, Володимир Миколайович; Maximova, T. I. (2000)
    It is shown by computer simulation of the Al-Si solid solution that at the first stages of Si precipitates formation the small Si clusters arise in the tetrahedral configurations. This process is accompanied by the effect ...
  • Ків, Арнольд Юхимович; Maximova, T. I.; Соловйов, Володимир Миколайович (2000-06)
    Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the ...
  • Ків, Арнольд Юхимович; Maximova, T. I.; Соловйов, Володимир Миколайович (2002-08)
    Si precipitates formation in Al-Si alloys is a subject of many investigations. Al alloys are widely used as structural materials in nuclear reactors and have many other important applications.
  • Ків, Арнольд Юхимович; Maximova, T. I.; Соловйов, Володимир Миколайович (1999-10)
    We have applied molecular dynamics method and semi-empirical potential [1] to obtain the realistic picture of Si surface layers relaxation. The starting configuration was taken as a parallelepiped containing 864 atoms. ...
  • Ків, Арнольд Юхимович; Maximova, T. I.; Соловйов, Володимир Миколайович (1999-12)
    We have applied molecular dynamics method and semi-empirical potential [1] to obtain the realistic picture of Si surface layers relaxation.The starting configuration was taken as a parallelepiped containing 864 atoms. There ...

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