Abstract:
We have applied molecular dynamics method and semi-empirical potential [1] to obtain the
realistic picture of Si surface layers relaxation. The starting configuration was taken as a parallelepiped containing 864 atoms. There were 12 layers with 72 atoms in each one. Periodic boundary conditions were used in two dimensions.
Description:
1. F.H. Stillinger, T.A. Weber, Phys. Rev., B31, 9262 (1985)
2. P.W. Jacobs, A.E. Kiv, R.M. Balabay et al., RAU Sci. Rep., Computer
modeling & New Technologies, 2, 15, (1998)
