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dc.contributor.authorLisovskyy, I. P.-
dc.contributor.authorLitovchenko, V. G.-
dc.contributor.authorGnenyy, B. M.-
dc.contributor.authorFussel, W.-
dc.contributor.authorКів, Арнольд Юхимович-
dc.contributor.authorСоловйов, Володимир Миколайович-
dc.contributor.authorMaximova, Tatiana I.-
dc.date.accessioned2017-07-09T18:22:20Z-
dc.date.available2017-07-09T18:22:20Z-
dc.date.issued2002-
dc.identifier.citationLisovskyy I. P. Effect of oxygen agglomeration in polycrystaline Si (SIPOS) films / I. P. Lisovskyy, V. G. Litovchenko, B. M. Gnenyy, W. Fussel, A. E. Kiv, V. N. Soloviev, T. I. Maximova // Journal of Materials Science: Materials in Electronics. – 2002. – Vol. 13, N 3. – Pp. 167-171.uk
dc.identifier.issn0957-4522-
dc.identifier.urihttp://elibrary.kdpu.edu.ua/handle/0564/1032-
dc.identifier.urihttps://doi.org/10.1023/A:1014385401282-
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dc.description.abstractIR transmission spectra of SIPOS structures were measured and were investigated by using an approach of deconvolution of the Si-O stretching band into Gauss profiles. It was found that the space distribution of oxygen in SIPOS layers treated at elevated temperatures does not correspond to the prediction of RBM statistics. The oxygen agglomeration was observed. Optical microscopy was also applied to get additional information about the SIPOS films after treatment in HF solution. The peculiarities of the space distribution of oxygen in SIPOS films are explained on the basis of a computer simulation of free Si surface relaxation. A computer model has shown that a disordered phase arises in the Si surface layers at elevated temperatures. This phase is characterized by a large concentration of stressed and dangling bonds. There are lattice nodes with more than one dangling bond that are suitable sites for oxygen agglomeration.uk
dc.language.isoenuk
dc.publisherSpringer Science+Business Mediauk
dc.subjectIR transmission spectrauk
dc.subjectSIPOS structuresuk
dc.subjectspace distributionuk
dc.subjectRBM statisticsuk
dc.subjectoxygen agglomerationuk
dc.subjectSIPOS filmsuk
dc.subjectHF solutionuk
dc.subjectpeculiarities of the space distribution of oxygenuk
dc.subjectcomputer simulationuk
dc.subjectfree Si surface relaxationuk
dc.subjectdisordered phaseuk
dc.subjectSi surface layersuk
dc.subjectstressed bondsuk
dc.subjectdangling bondsuk
dc.subjectquasi-disordered phaseuk
dc.titleEffect of oxygen agglomeration in polycrystaline Si (SIPOS) filmsuk
dc.typeArticleuk
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